Semiconductor memory device
US5005068A · kind A · utility
36Cited by
7References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1989 |
| Grant date | Apr 2, 1991 |
| Priority date | — |
| Expiry date | Jul 7, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/906
Abstract
A static RAM having first word lines each defined by extended gate electrodes of MISFETs constituting memory cells, and second word lines which are separate from the first word lines. The RAM has a wiring for supplying a fixed potential such as a ground potential to the memory cells, the wiring being formed from the same layer as that for forming the second word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.