Fabrication of P-N junction semiconductor device
US5006483A · kind A · utility
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4References
4Claims
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Key dates
| Filing date | Jun 26, 1990 |
| Grant date | Apr 9, 1991 |
| Priority date | — |
| Expiry date | Jun 26, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
Abstract
A gallium arsenide diode is disclosed which has a very thin resistive layer of a metal oxide, typically titanium oxide, formed annularly on a semiconductor substrate across the exposed annular periphery of a p-n junction. The titanium oxide layer has a sheet resistance of not less than 10 kilohms per square and creates a Schottky barrier between itself and the neighboring n type region of the substrate. The titanium oxide layer can be formed by first vacuum depositing titanium on the substrate and then heating the titanium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.