Method for fabricating a thin film transistor using a silicide as an etch mask
US5008218A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1989 |
| Grant date | Apr 16, 1991 |
| Priority date | — |
| Expiry date | Sep 18, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an active matrix substrate is disclosed which includes the following steps: forming an island region of a first semiconductor film on a prescribed insulating substrate; forming a first insulating film and a second semiconductor film on said first insulating film; forming a second insulating film on said second semiconductor film and thereafter forming a prescribed pattern of the second insulating film; depositing prescribed metal on the pattern and thereafter forming a compound of the second semiconductor film and the metal; removing unreacted portion of the metal; and etching said second semiconductor film and said first insulating film using said compound as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.