Opposed field magnetoresistive memory sensing
US5012444A · kind A · utility
16Cited by
4References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 1990 |
| Grant date | Apr 30, 1991 |
| Priority date | — |
| Expiry date | Apr 4, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.