Arthur V. Pohm
35Patents
17h-index
10Co-inventors
78Inventor score
Filing activity: Mar 19, 1976 → Mar 4, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6744086B2 | Current switched magnetoresistive memory cell | Electricity | 192 | Expired |
| US6777730B2 | Antiparallel magnetoresistive memory cells | Electricity | 141 | Expired |
| US4780848A | Magnetoresistive memory with multi-layer storage cells having layers of limited thickness | Physics | 120 | Expired |
| US5251170A | Offset magnetoresistive memory structures | Electricity | 62 | Expired |
| US6404191B2 | Read heads in planar monolithic integrated circuit chips | Physics | 53 | Expired |
| US5420819A | Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage | Physics | 53 | Expired |
| US5892708A | Magnetoresistive memory using large fraction of memory cell films for data storage | Physics | 53 | Expired |
| US5424236A | Method for forming offset magnetoresistive memory structures | Electricity | 48 | Expired |
| US6963098B2 | Thermally operated switch control memory cell | Electricity | 47 | Expired |
| US6021065A | Spin dependent tunneling memory | Electricity | 46 | Expired |
| US6538921B2 | Circuit selection of magnetic memory cells and related cell structures | Physics | 45 | Expired |
| US6535416B1 | Magnetic memory coincident thermal pulse data storage | Electricity | 34 | Expired |
| US6072382A | Spin dependent tunneling sensor | Physics | 27 | Expired |
| US5636159A | Magnetoresistive memory using large fractions of memory cell films for data storage | Physics | 26 | Expired |
| US6147900A | Spin dependent tunneling memory | Electricity | 21 | Expired |
| US5949707A | Giant magnetoresistive effect memory cell | Electricity | 19 | Expired |
| US5966322A | Giant magnetoresistive effect memory cell | Electricity | 19 | Expired |
| US5060193A | Magnetic state entry assurance | Physics | 17 | Expired |
| US5012444A | Opposed field magnetoresistive memory sensing | Physics | 16 | Expired |
| US6275411A | Spin dependent tunneling memory | Physics | 15 | Expired |
| US6455177B1 | Stabilization of GMR devices | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7148531B2 | Magnetoresistive memory SOI cell | Electricity | 12 | Expired |
| US6349053B1 | Spin dependent tunneling memory | Physics | 11 | Expired |
| US7177178B2 | magnetic memory layers thermal pulse transitions | Electricity | 10 | Expired |
| US5768180A | Magnetoresistive memory using large fractions of memory cell films for data storage | Physics | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.