Vertical cavity semiconductor laser with lattice-mismatched mirror stack
US5012486A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1990 |
| Grant date | Apr 30, 1991 |
| Priority date | — |
| Expiry date | Apr 6, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a vertical semiconductor laser, the top mirror is composed of alternating layers of lattice-mismatched semiconductors. Quantum reflections and other charge transport barriers for majority carriers at the interface, and hence electrical resistance and power dissipation, are reduced by choosing the lattice-mismatched semiconductor materials in such a manner as to align their band edges for majority carriers. On the other hand, the semiconductor materials are selected to supply relatively large refractive index differences, and hence relatively large optical reflections, at their interfaces. The lattice-mismatching may also produce vertical thread dislocations through the stack, which increase the electrical conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.