Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth
US5013684A · kind A · utility
17Cited by
8References
21Claims
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Key dates
| Filing date | Mar 24, 1989 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Mar 24, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form patterned buried impurity layers in semiconductor devices, such as heterostructure lasers and array lasers, which function as buried impurity induced layer disordering (BIILD) sources upon subsequent annealing. These layers may be formed to either function as buried impurity induced layer disordering (BIILD) sources or function as a reverse bias junction configuration of confining current to the active region of a laser structure. Their discussion here is limited to the first mentioned function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.