Magnetoresistive sensor with improved antiferromagnetic film
US5014147A · kind A · utility
47Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1989 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Oct 31, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/399
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An improved thin film magnetoresistive (MR) sensor uses an alloy comprising Fe.sub.(1-x) Mn.sub.x, where x is within the range of 0.3 to 0.4, as an antiferromagnetic layer to provide longitudinal exchange bias in the ferromagnetic MR layer. In a specific embodiment the exchange bias is at a high level and is independent of thickness of the antiferromagnetic layer over a wide range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.