Stuart Stephen Papworth Parkin
114Patents
41h-index
71Co-inventors
93Inventor score
Filing activity: Mar 8, 1988 → May 12, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5640343A | Magnetic memory array using magnetic tunnel junction devices in the memory cells | Physics | 770 | Expired |
| US5206590A | Magnetoresistive sensor based on the spin valve effect | Physics | 377 | Expired |
| US5650958A | Magnetic tunnel junctions with controlled magnetic response | Physics | 325 | Expired |
| US5465185A | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor | Physics | 253 | Expired |
| US6166948A | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers | Electricity | 253 | Expired |
| US6834005B1 | Shiftable magnetic shift register and method of using the same | Electricity | 213 | Expired |
| US5159513A | Magnetoresistive sensor based on the spin valve effect | Physics | 203 | Expired |
| US5408377A | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor | Electricity | 202 | Expired |
| US5729410A | Magnetic tunnel junction device with longitudinal biasing | Physics | 181 | Expired |
| US5841692A | Magnetic tunnel junction device with antiferromagnetically coupled pinned layer | Physics | 173 | Expired |
| US5764567A | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response | Electricity | 156 | Expired |
| US6023395A | Magnetic tunnel junction magnetoresistive sensor with in-stack biasing | Physics | 140 | Expired |
| US5898548A | Shielded magnetic tunnel junction magnetoresistive read head | Physics | 139 | Expired |
| US7230265B2 | Spin-polarization devices using rare earth-transition metal alloys | Electricity | 122 | Expired |
| US6114719A | Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell | Electricity | 120 | Expired |
| US5898547A | Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide | Physics | 118 | Expired |
| US5801984A | Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment | Physics | 108 | Expired |
| US5966012A | Magnetic tunnel junction device with improved fixed and free ferromagnetic layers | Electricity | 105 | Expired |
| US6331944A | Magnetic random access memory using a series tunnel element select mechanism | Physics | 94 | Expired |
| US6269018A | Magnetic random access memory using current through MTJ write mechanism | Physics | 91 | Expired |
| US5901018A | Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide | Physics | 80 | Expired |
| US7274080B1 | MgO-based tunnel spin injectors | Emerging Cross-Sectional Technologies | 79 | Expired |
| US7031178B2 | Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same | Electricity | 73 | Expired |
| US5585986A | Digital magnetoresistive sensor based on the giant magnetoresistance effect | Emerging Cross-Sectional Technologies | 69 | Expired |
| US6518588B1 | Magnetic random access memory with thermally stable magnetic tunnel junction cells | Electricity | 67 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.