Laser diode pumped, erbium-doped, solid state laser with high slope efficiency
US5014279A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1989 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Oct 31, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1653
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser and method for producing a laser emission at a wavelength of substantially 2.8 microns is disclosed. In a preferred embodiment of the invention, the laser comprises laser diode means for emitting a pump beam at a preselected wavelength; a crystal; and a laser cavity defined by first and second reflective elements at opposing ends of the crystal to form a reflective path therebetween; the crystal having a preselected host material doped with a predetermined percent concentration of erbium activator ions sufficient to produce a laser emission at substantially 2.8 microns when the crystal is pumped by the laser diode means, a portion of the laser emission at substantially 2.8 microns being outputted from one of the first and second reflective elements at a slope efficiency of at least 5 percent, but preferably 10 percent, when the crystal is pumped by the pump beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.