Plasma reactor and process with wafer temperature control
US5016332A · kind A · utility
64Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1990 |
| Grant date | May 21, 1991 |
| Priority date | — |
| Expiry date | Apr 13, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gas plasma system and process which are particularly suitable for photoresist stripping and descumming operations. A wafer is placed on a heated platen in a processing chamber and is lifted away from the platen to control thermal contact between the wafer and the platen. The front side of the wafer is also heated with radiant heat energy, and the temperature of the platen is adjusted to control the temperature of the wafer. In the disclosed embodiments, a gas plasma is generated outside the processing chamber and introduced into the chamber through a gas distribution plate which is also transparent to the radiant heat energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.