Semiconductor device using MIS capacitor
US5018000A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1989 |
| Grant date | May 21, 1991 |
| Priority date | — |
| Expiry date | Jun 16, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/611
Abstract
A MIS capacitor to be implemented in a semiconductor device employing various or predetermined circuits, has a dielectric side electrode which is in contact with a buried layer provided on a semiconductor substrate through a dielectric film and a buried layer-side electrode connected to the buried layer. The buried layer-side electrode of the MIS capacitor is connected to a low-impedance side of the circuit employed therewith. This structure, when connected as such, is capable of reducing the influence of noise attributed to an .alpha.-ray and thereby operating the circuit stably. The semiconductor device using a MIS capacitor invention is adaptable to an emitter follower circuit and various logic circuits for preventing malfunction resulting from .alpha.-ray radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.