Gate turn-off thyristor
US5021855A · kind A · utility
5Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1989 |
| Grant date | Jun 4, 1991 |
| Priority date | — |
| Expiry date | Mar 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate turn-off thyristor includes a cathode emitter of n-type, a cathode base of p-type, an anode base of n-type and an anode emitter of p-type. A gate electrode is electrically connected to the p cathode base to enclose and define an elemental gate turn-off thyristor region. A plurality of n cathode emitter regions are arranged in proximity to each other in the elemental gate turn-off thyristor region. A highly-doped buried gate region is provided in the p cathode base with the substantially identical configuration for each n cathode emitter regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.