Integrated device for shielding the injection of charges into the substrate
US5021860A · kind A · utility
26Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1988 |
| Grant date | Jun 4, 1991 |
| Priority date | — |
| Expiry date | Oct 11, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
The device for shielding the electrons injected towards the substrate by an epitaxial pocket which reaches a negative voltage with respect to said substrate, comprises a debiasing transistor arranged in reverse configuration (with collector and emitter swapped) in the same epitaxial pocket reaching a negative voltage. The transistor is connected with its emitter and its collector between the buried layer of the pocket reaching a negative voltage and the substrate, so as to debias the junction formed by the buried layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.