Electrode for use in the treatment of an object in a plasma
US5022979A · kind A · utility
50Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1988 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | Oct 25, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by a CVD coating process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.