Method of diffusing Zn into compound semiconductor
US5023199A · kind A · utility
15Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1990 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | Jan 4, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of diffusing Zn into AlGaInP using Al.sub.x G.sub.1-x As (0.ltoreq.x.ltoreq.1) as a diffusion stopping at a position of predetermined depth from the surface of the AlGaInP, or using Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) as a diffusion mask which is disposed on the surface of the AlGaInP.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.