Takashi Motoda
26Patents
13h-index
19Co-inventors
78Inventor score
Filing activity: Dec 30, 1988 → Sep 10, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5496408A | Apparatus for producing compound semiconductor devices | Electricity | 567 | Expired |
| US5589110A | Container for liquid metal organic compound | Electricity | 546 | Expired |
| US5110687A | Composite member and method for making the same | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5272109A | Method for fabricating visible light laser diode | Electricity | 33 | Expired |
| US5872022A | Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser | Electricity | 25 | Expired |
| US5573976A | Method of fabricating semiconductor laser | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5737350A | Semiconductor laser having multi-quantum barrier including complex barrier structure and method of making the semiconductor laser | Electricity | 18 | Expired |
| US5763291A | Method of making semiconductor laser | Electricity | 15 | Expired |
| US5023199A | Method of diffusing Zn into compound semiconductor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5734670A | Semiconductor device, semiconductor laser, and high electron mobility transistor | Electricity | 14 | Expired |
| US5272712A | Semiconductor laser device | Electricity | 14 | Expired |
| US5582647A | Material supplying apparatus | Chemistry; Metallurgy | 14 | Expired |
| US5677922A | Semiconductor laser with crystalline window layer | Electricity | 13 | Expired |
| US5544187A | Multiquantum barrier structure and semiconductor laser diode | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5604764A | Semiconductor laser | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4943319A | Process for producing highly functional composite material and composite material obtained thereby | Performing Operations; Transporting | 8 | Expired |
| US5741359A | Method and apparatus for zone-melting recrystallization of semiconductor layer | Emerging Cross-Sectional Technologies | 7 | Expired |
| US8563343B2 | Method of manufacturing laser diode device | Electricity | 7 | Active |
| US5656539A | Method of fabricating a semiconductor laser | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5694410A | Semiconductor laser device | Electricity | 5 | Expired |
| US5025450A | Semiconductor laser device | Electricity | 1 | Expired |
| US5768303A | Semiconductor device | Electricity | 1 | Expired |
| US8472495B2 | Laser device and method of manufacture thereof | Electricity | 0 | Active |
| US8369372B1 | Laser device | Electricity | 0 | Active |
| US9041197B2 | Semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.