Semiconductor device with adjacent non-oxide layers and the fabrication thereof
US5023206A · kind A · utility
10Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1987 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | Dec 16, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed in which a deposited non-oxide layer (44) overlies and physically contacts another non-oxide layer (38) so that no intervening oxide layer is present. The device is fabricated by performing an insitu etch and deposition process. In one embodiment, the device (36) is sealed in a LPCVD chamber (10) and etched using gaseous anhydrous hydrofluoric acid to remove an oxide (40) from one non-oxide layer (38). Then, without exposing the device to a water rinse or to the atmosphere, a chemical vapor deposition process applies the deposited layer (44) upon the other layer (38).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.