Electron beam device
US5023457A · kind A · utility
8Cited by
4References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 30, 1990 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | May 30, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/141
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An unipolar magnetic field type objective lens used as an objective lens of an electron beam device. By properly adjusting the shape and strength of the objective lens, not only the aberration coefficients of the objective lens are reduced but also the secondary electrons emitted from a sample are efficiently detected to thereby allow semiconductor wafers of large diameter to be observed at a low acceleration voltage, a large angle of inclination, and with a high resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.