Microwave plasma processing apparatus
US5024748A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 22, 1990 |
| Grant date | Jun 18, 1991 |
| Priority date | — |
| Expiry date | Jan 22, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma processing apparatus used for etching or ashing processes of a semiconductor substrate, comprising a plasma generation chamber, into which a reactive gas and microwave power are introduced, a reaction chamber in which the substrate is disposed for processing, and a plasma shield plate separating the reaction chamber from the plasma generation chamber, the plasma shield plate being of electrically conductive material and having at least a hole for flowing the plasma into the reaction chamber and forming a portion of the plasma generation chamber. The microwave plasma processing apparatus of the invention further comprises a cover member disposed on a surface of the plasma shield plate facing the plasma generation chamber and made of inactive material with active species included in the plasma such as quartz and alumina ceramic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.