Semiconductor laser device
US5025450A · kind A · utility
1Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1990 |
| Grant date | Jun 18, 1991 |
| Priority date | — |
| Expiry date | Feb 21, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2232
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes an active layer including a bent or a curved light emission portion which is bent or curved toward the device surface side or toward the substrate side, lower and upper cladding layers opposite sides of the active layer, and a diffusion region produced by diffusing impurities to a position within the lower cladding layer or the upper cladding layer forming a pn junction in the respective lower or upper cladding layer to direct current flow in the lower cladding layer into the part of the active layer emitting light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.