Solid state RF power amplifier having improved efficiency and reduced distortion
US5027082A · kind A · utility
9Cited by
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10Claims
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Assignee
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Key dates
| Filing date | May 1, 1990 |
| Grant date | Jun 25, 1991 |
| Priority date | — |
| Expiry date | May 1, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF power device including a DMOS field effect transistor has increased efficiency and reduced distortion. A capacitor is connected between the gate and source input of the transistor which swamps non-linear variations of the parasitic capacitance (C.sub.GD) between the gate and drain, thereby offsetting the Miller effect of the feedback provided by the MOS transistor parasitic capacitance. The capacitor, the Ciss of the MOS transistor, and the inductance of input leads provide a device input resonant frequency between the input signal fundamental frequency and the first harmonic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.