Howard D. Bartlow
18Patents
7h-index
16Co-inventors
63Inventor score
Filing activity: Jun 30, 1988 → Apr 29, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5898198A | RF power device having voltage controlled linearity | Electricity | 41 | Expired |
| US5023189A | Method of thermal balancing RF power transistor array | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5825089A | Low thermal resistance spring biased RF semiconductor package mounting structure | Electricity | 12 | Expired |
| US5338974A | RF power transistor package | Electricity | 10 | Expired |
| US5027082A | Solid state RF power amplifier having improved efficiency and reduced distortion | Electricity | 9 | Expired |
| US5949649A | High power semiconductor device having bolt-down ceramic platform | Electricity | 9 | Expired |
| US5329156A | Feed bus for RF power transistors | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4971929A | Method of making RF transistor employing dual metallization with self-aligned first metal | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5414296A | Venetian blind cell layout for RF power transistor | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5825088A | Low thermal resistance semiconductor package and mounting structure | Electricity | 7 | Expired |
| US7132701B1 | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods | Electricity | 3 | Expired |
| US6548869B2 | Voltage limiting protection for high frequency power device | Electricity | 3 | Expired |
| US8384228B1 | Package including wires contacting lead frame edge | Electricity | 2 | Active |
| US6297700A | RF power transistor having cascaded cells with phase matching between cells | Electricity | 2 | Expired |
| USRE42423E1 | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods | General | 1 | Active |
| US6525423B2 | Semiconductor device package and method of die attach | Electricity | 0 | Expired |
| US7638820B2 | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods | Electricity | 0 | Active |
| US8288845B2 | Package including proximately-positioned lead frame | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.