Semiconductor devices and a process for producing the same
US5028975A · kind A · utility
6Cited by
4References
61Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1990 |
| Grant date | Jul 2, 1991 |
| Priority date | — |
| Expiry date | May 23, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an MOSIC including a plurality of silicon gate type MOSFET's in which, after polycrystalline silicon wirings are formed simultaneously with polycrystalline silicon gates, the electrodes contacted with the source and drain regions are made of polycrystalline silicon so as to be connected to the polycrystalline silicon wirings, thereby to prevent the shallow pn junctions of the source and drain regions from being destroyed by the contacts and to provide a high degree of integration to one silicon chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.