Trench etching process
US5030316A · kind A · utility
5Cited by
1References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1990 |
| Grant date | Jul 9, 1991 |
| Priority date | — |
| Expiry date | Jan 8, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3085
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench etching process comprises the steps of: preparing a substrate, forming a mask pattern for the trench etching having a material different from that of the substrate, on the substrate, and detecting changes in results of emission spectroanalyses generated by etching the mask pattern and the substrate while using the etching ratios of the mask pattern and the silicon substrate to determine that the trench etching is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.