Method of oxide etching with condensed plasma reaction product
US5030319A · kind A · utility
342Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1989 |
| Grant date | Jul 9, 1991 |
| Priority date | — |
| Expiry date | Dec 27, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Oxide material, on a substrate, in a reactor, is etched by dissolving a hydrogen halide reaction product in a liquid phase reaction product. Both the hydrogen halide and liquid phase reaction products are produced through a chemical reaction of a reactive gas containing hydrogen and halogen elements as well as at least one gaseous compound which has been remotely activated. The liquid phase reaction product is obtained by condensation on the oxide material. The use of charged particle beams and irradiating light is discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.