Process and apparatus for the formation of a functional deposited film on a cylindrical substrate by means of microwave plasma chemical vapor deposition
US5030476A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 1990 |
| Grant date | Jul 9, 1991 |
| Priority date | — |
| Expiry date | May 21, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means. The process enables the deposited film of good quality to be formed stably at high speed and the deposited film is useful as an element member for semiconductive devices, photosensitive devices for electrophotography, photovoltaic devices, other electronic elements and optical element…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.