Semiconductor device with a high breakdown voltage
US5031021A · kind A · utility
9Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1986 |
| Grant date | Jul 9, 1991 |
| Priority date | — |
| Expiry date | Sep 11, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
Abstract
There is disclosed a power transistor comprising a semiconductor substrate having a PN junction exposed on a major surface of the semiconductor substrate, and a semiinsulative polysilicon film formed on the major surface, the polysilicon film covering the PN junction, the polysilicon film containing at least one of carbon, oxygen, and nitrogen, and the polysilicon film having a thickness of about 3000 .ANG..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.