Yoshiro Baba
34Patents
18h-index
38Co-inventors
81Inventor score
Filing activity: Feb 12, 1986 → Sep 8, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5321289A | Vertical MOSFET having trench covered with multilayer gate film | Electricity | 110 | Expired |
| US5126807A | Vertical MOS transistor and its production method | Electricity | 103 | Expired |
| US5242845A | Method of production of vertical MOS transistor | Electricity | 94 | Expired |
| US5578508A | Vertical power MOSFET and process of fabricating the same | Electricity | 85 | Expired |
| US6239464A | Semiconductor gate trench with covered open ends | Electricity | 76 | Expired |
| US5282018A | Power semiconductor device having gate structure in trench | Electricity | 53 | Expired |
| US4710794A | Composite semiconductor device | Electricity | 49 | Expired |
| US5770514A | Method for manufacturing a vertical transistor having a trench gate | Electricity | 41 | Expired |
| US6060747A | Semiconductor device | Electricity | 36 | Expired |
| US5250446A | Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5086332A | Planar semiconductor device having high breakdown voltage | Electricity | 31 | Expired |
| US5084408A | Method of making complete dielectric isolation structure in semiconductor integrated circuit | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5733810A | Method of manufacturing MOS type semiconductor device of vertical structure | Electricity | 26 | Expired |
| US4968932A | Evaluation method for semiconductor device | Physics | 26 | Expired |
| US5126817A | Dielectrically isolated structure for use in soi-type semiconductor device | Electricity | 25 | Expired |
| US6337498B1 | Semiconductor device having directionally balanced gates and manufacturing method | Electricity | 23 | Expired |
| US5610422A | Semiconductor device having a buried insulated gate | Electricity | 20 | Expired |
| US5726088A | Method of manufacturing a semiconductor device having a buried insulated gate | Electricity | 19 | Expired |
| US5731637A | Semiconductor device | Electricity | 16 | Expired |
| US5589421A | Method of manufacturing annealed films | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5554872A | Semiconductor device and method of increasing device breakdown voltage of semiconductor device | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6524894B1 | Semiconductor device for use in power-switching device and method of manufacturing the same | Electricity | 12 | Expired |
| US4984052A | Bonded substrate of semiconductor elements having a high withstand voltage | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5917228A | Trench-type schottky-barrier diode | Electricity | 12 | Expired |
| US5031021A | Semiconductor device with a high breakdown voltage | Electricity | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.