Method of producing a semiconductor device including a Schottky gate
US5032541A · kind A · utility
40Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1989 |
| Grant date | Jul 16, 1991 |
| Priority date | — |
| Expiry date | Aug 21, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28587
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor device includes etching a recessed aperture in a substrate, forming a gate electrode in the aperture, burying the gate electrode with resist, etching the resist to expose the gate electrode, depositing a high conductivity metal on the gate electrode, and forming ohmic electrodes on opposite sides of the gate electrode by a series of processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.