Integrated semiconductor diode laser and photodiode structure
US5032879A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1990 |
| Grant date | Jul 16, 1991 |
| Priority date | — |
| Expiry date | Jun 11, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated semiconductor structure with optically coupled laser diode (11) and photodiode 12A, both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.