Method of forming semiconductor stalk structure by epitaxial growth in trench
US5034342A · kind A · utility
7Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1990 |
| Grant date | Jul 23, 1991 |
| Priority date | — |
| Expiry date | Jun 29, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.