Method for forming shorting contact for semiconductor which allows for relaxed alignment tolerance
US5034346A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1990 |
| Grant date | Jul 23, 1991 |
| Priority date | — |
| Expiry date | Jul 13, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/102
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for forming a shorting contact for shorting P-type and N-type conductivity regions in a semiconductor together. In one embodiment of this method, the P-type region is substantially a square and is surrounded by the N-type region. A substantially square contact opening is made to expose the P-type region and a portion of the N-type region. Sides of the contact opening are formed to be at substantially 45 degree angles with respect to sides of the substantially square P-type region. In this manner, the alignment tolerance for forming the contact opening is less critical than if the sides of the contact opening were parallel to the sides of the P-type region. The contact opening is then filled with a conductive material to electrically short the P-type region to the N-type region. The conductivity types in this example may be reversed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.