Multi-layered field oxide structure
US5037781A · kind A · utility
3Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1988 |
| Grant date | Aug 6, 1991 |
| Priority date | — |
| Expiry date | Jul 5, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/901
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A radiation-hardened field oxide comprises a thin layer of high-quality thermal oxide, a thick layer of borophosphosilica glass and a diffusion barrier layer of undoped oxide, with the boron and phosphorous provising recombination sites for electron-hole pairs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.