John Chaffee
6Patents
3h-index
6Co-inventors
50Inventor score
Filing activity: Jul 5, 1988 → Sep 3, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6511893B1 | Radiation hardened semiconductor device | Electricity | 9 | Expired |
| US6063690A | Method for making recessed field oxide for radiation hardened microelectronics | Electricity | 8 | Expired |
| US5037781A | Multi-layered field oxide structure | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8530934B2 | Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto | Electricity | 2 | Active |
| US6855618B2 | Radiation hardened semiconductor device | Electricity | 2 | Expired |
| US9012308B2 | Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.