Bidirectional semiconductor component that can be turned off
US5040042A · kind A · utility
34Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1990 |
| Grant date | Aug 13, 1991 |
| Priority date | — |
| Expiry date | Apr 25, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/80
Abstract
In the case of a symmetrically constructed TRIAC, which comprises a semiconductor substrate (20) with an internal n-base layer (9), two adjoining p-base layers (7, 11), two n-emitter regions (4, 12) let into the p-base layers (7, 11), two main electrodes (1, 17) arranged on the principal faces (29, 30), and two firing devices, a simplified control is achieved by means of MOS-controlled short circuits (3, 5, 6, 7 or 11, 13, 14, 16) at the n-emitter regions (4 or 12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.