Chemical vapor deposition method using a plasma self-cleaning
US5041311A · kind A · utility
20Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1990 |
| Grant date | Aug 20, 1991 |
| Priority date | — |
| Expiry date | Mar 9, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4404
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD method comprises the steps of making a plasma self-cleaning within a chamber using a gas which includes fluorine, coating an inside of the chamber by a first layer of a material which includes silicon and nitrogen, and forming a second layer on a predetermined surface within the chamber by a chemical vapor deposition. The second layer is made of a material which includes a quantity of nitrogen smaller than a quantity of nitrogen included in the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.