Atsuhiro Tsukune
10Patents
7h-index
25Co-inventors
66Inventor score
Filing activity: Mar 17, 1987 → Oct 27, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4804560A | Method of selectively depositing tungsten upon a semiconductor substrate | Electricity | 100 | Expired |
| US5609721A | Semiconductor device manufacturing apparatus and its cleaning method | Emerging Cross-Sectional Technologies | 64 | Expired |
| US5041311A | Chemical vapor deposition method using a plasma self-cleaning | Chemistry; Metallurgy | 20 | Expired |
| US6635523B1 | Semiconductor device and method of manufacturing the same | Electricity | 15 | Expired |
| US5233163A | Graphite columnar heating body for semiconductor wafer heating | Electricity | 12 | Expired |
| US4781945A | Process for the formation of phosphosilicate glass coating | Electricity | 11 | Expired |
| US8836126B2 | Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese | Electricity | 8 | Active |
| US8916468B2 | Semiconductor device fabrication method | Electricity | 6 | Active |
| US6344363B1 | Method of making ferroelectric film with protective cover film against hydrogen and moisture | Electricity | 1 | Expired |
| US9704740B2 | Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.