Semiconductor device
US5041897A · kind A · utility
12Cited by
2References
2Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 17, 1990 |
| Grant date | Aug 20, 1991 |
| Priority date | — |
| Expiry date | Oct 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a fuse element formed on an insulating substrate, and a first insulating layer formed on the substrate and covering the fuse element. Further insulation on the first insulating layer nitride has an opening exposing the region of the first insulating layer above said fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.