Semiconductor laser using five-element compound semiconductor
US5042043A · kind A · utility
67Cited by
7References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 13, 1990 |
| Grant date | Aug 20, 1991 |
| Priority date | — |
| Expiry date | Apr 13, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure, or a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layers with a zinc blende type structure a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type, together constituting a double heterojunction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.