Dual oxide channel stop for semiconductor devices
US5043293A · kind A · utility
1Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 1990 |
| Grant date | Aug 27, 1991 |
| Priority date | — |
| Expiry date | Jun 1, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to oxide-semiconductor interfaces which are grown with varying amounts of fixed positive (or negative) charge. The invention utilizes these different values to form a channel stop for a charge transfer device. For HgCdTe two different oxides are used, namely, those produced by wet anodization (having large values of fixed positive charge) and plasma oxidation (having low values of fixed charge). The voltage range of operation of the active gate is determined by the difference in fixed positive charge for these regions and the insulator thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.