Apparatus for improving the reactant gas flow in a reaction chamber
US5044315A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1990 |
| Grant date | Sep 3, 1991 |
| Priority date | — |
| Expiry date | Jan 23, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus for processing a single wafer and a reaction chamber for conducting an epitaxial deposition process therein. The chamber has a substantially rectangular cross section reduced for increased system efficiency. Because the reduced cross section has insufficient room for a susceptor, the susceptor, in one embodiment, is mounted within a second portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable deposits beneath the susceptor from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor are controlled, for example, by a quartz plate which narrows and simultaneously shapes the gap between the susceptor and the input end of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.