Process for making thin film solar cell
US5045409A · kind A · utility
126Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1988 |
| Grant date | Sep 3, 1991 |
| Priority date | — |
| Expiry date | Nov 17, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making group I-III-VI compound semiconductors such as copper indium diselenide for use in thin film heterojunction photovoltaic devices. A composite film of copper, indium, and possibly other group IIIA elements, is deposited upon a substrate. A separate film of selenium is deposited on the composite film. The substrate is then heated in a chamber in the presence of a gas containing hydrogen to form the compound semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.