Method of making a schottky electrode
US5045497A · kind A · utility
3Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1989 |
| Grant date | Sep 3, 1991 |
| Priority date | — |
| Expiry date | Oct 25, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
Abstract
A semiconductor device includes a semiconductor body and a metal contact forming a Schottky barrier with said body, the metal contact including a layer of nickel disposed on the semiconductor body, an aluminum layer disposed on the nickel layer, and a nickel aluminum alloy disposed at the interface of the layers. The alloy is formed by heating the metal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.