Palladium enhanced fluxless soldering and bonding of semiconductor device contacts
US5048744A · kind A · utility
33Cited by
20References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 1990 |
| Grant date | Sep 17, 1991 |
| Priority date | — |
| Expiry date | May 14, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/3457
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.