Process for the hydrophilizing and/or cement-residue-removing surface treatment of silicon wafers

US5049200A · kind A · utility

Assignee

• Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

• Roland Brunner · Wien, AT
• Susanne Bauer-Mayer · Burghausen, DE
• Rudolf Griesshammer · Altötting, DE
• Helmut Kirschner · Munich, DE

Key dates

• Filing date: Oct 5, 1988
• Grant date: Sep 17, 1991
• Expiry date: Oct 5, 2008

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02052
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon wafers can be provided with a hydrophilic surface and/or freed of hering cement residues originating from the polishing operation with the aid of solutions adjusted to a pH of 8 to 14 with the aid of alkali-metal or alkaline-earth-metal compounds and containing hydrogen peroxide. These processes can even be carried out at room temperature and are remarkable for their low chemical consumption and easy manageability.