Multi-layered interconnection structure for a semiconductor device
US5049975A · kind A · utility
120Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1990 |
| Grant date | Sep 17, 1991 |
| Priority date | — |
| Expiry date | Mar 12, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride layer, and a second refractory metal nitride layer. Titanium or tungsten is used as a refractory metal. The second refractory metal nitride is formed by thermally nitriding the refractory metal layer. The second refractory metal nitride layer formed by the thermal process has a close packed crystal structure and has an excellent barrier characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.