Method of producing semiconductor wafer through gettering using spherical abrasives
US5051375A · kind A · utility
7Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Jul 10, 1989 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Jul 10, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of producing a semiconductor wafer through gettering by means of sand blasting in a semiconductor wafer fabrication process. The method includes blasting abrasives each having a configuration at least similar to a sphere against a back surface of the semiconductor wafer, causing shear stress having a maximum point in the interior of the wafer to be generated, whereby damage is produced mainly in the interior of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.