Process for producing semiconductor device
US5051380A · kind A · utility
38Cited by
3References
2Claims
0Family size
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Key dates
| Filing date | Dec 14, 1990 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Dec 14, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for producing a semiconductor device, deposition of a CVD-SiO.sub.2 film at a given first O.sub.3 concentration according to a TEOS-SiO.sub.3 reaction is followed by further deposition of a CVD-SiO.sub.2 film at a second O.sub.3 concentration higher than the first O.sub.3 concentration according to the TEOS-O.sub.3 reaction to form a CVD-SiO.sub.2 film having a predetermined thickness and a surface little uneven.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.