Read/write optical memory
US5051950A · kind A · utility
11Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1989 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Jul 31, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An improved read/write optical disk is disclosed which is capable of being rewritten more than 10.sup.6 times. The disk utilizes a storage medium in which data is stored as different polarization states in the same phase of the material. The preferred embodiment utilizes a lead lanthanum zirconate titanate material for the storage medium. The state of polarization of the material at the location of a specified data bit is changed by applying a voltage to the bit location in question. The location is specified by illuminating the surface of the disk with light in the infra-red.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.